The TS512MSK64V3N-I is a 512 M x 64 bits DDR3-1333 2 rank SO-DIMM. The TS512MSK64V3N-I consists of 16 pcs 256 M x 8 bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. The TS512MSK64V3N-I is a dual in-line memory module and is intended for mounting into 204-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
- Gold plating of PCB gold finger is 30 u.
- RoSH compliant.
- 8-bit pre-fetch.
- Bi-directional differential data-strobe.
- Internal calibration through ZQ pin.
- On die termination with ODT pin.
- Detect with EEPROM.
- Asynchronous reset.
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